- 您现在的位置：买卖IC网 > Sheet目录463 > IXTK8N150L (IXYS)MOSFET N-CH 1500V 8A TO-264
IXTK8N150L
IXTX8N150L
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-264 (IXTK) Outline
g fs
V DS = 50V, I D = 0.5 ? I D25 , Note 1
1.4
2.3
3.2
S
C iss
8000
pF
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 15V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 2 Ω (External)
V GS = 15V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
405
70
36
18
90
95
250
80
116
0.15
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.18 ° C/W
° C/W
Safe Operating Area Specification
Symbol
Test Conditions
Min.
Characteristic Values
Typ. Max.
SOA
V DS = 1000V, I D = 0.5A, T C = 60 ° C, T P = 3s
500
W
PLUS 247 TM (IXTX) Outline
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = 8A, V GS = 0V, Note 1
I F = I S , -di/dt =100A/ μ s, V R = 100V
1700
8
32
1.2
A
A
V
ns
Terminals:
1 - Gate
2 - Drain (Collector)
Notes: 1. Pulse Test, t ≤ 300 μ s; Duty Cycle, d ≤ 2%.
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
A
Millimeter
Min. Max.
4.83 5.21
Inches
Min. Max.
.190 .205
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
A 1
A 2
b
b 1
b 2
C
D
E
e
L
L1
Q
R
2.29 2.54
1.91 2.16
1.14 1.40
1.91 2.13
2.92 3.12
0.61 0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81 4.32
5.59 6.20
4.32 4.83
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXTK90N15
MOSFET N-CH 150V 90A TO-264
IXTL2X180N10T
MOSFET N-CH 100V ISOPLUS I5-PAK
IXTL2X200N085T
MOSFET N-CH 85V ISOPLUS I5-PAK
IXTL2X220N075T
MOSFET N-CH 75V ISOPLUS I5-PAK
IXTL2X240N055T
MOSFET N-CH 55V 140A ISOPLUS I5
IXTN110N20L2
MOSFET N-CH 200V 100A SOT-227
IXTN17N120L
MOSFET N-CH 1200V 15A SOT-227B
IXTN200N10T
MOSFET N-CH 100V 200A SOT-227
相关代理商/技术参数
IXTK90N15
功能描述:MOSFET 90 Amps 150V 0.016 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTK90N25L2
功能描述:MOSFET 90 Amps 250V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTK90P20P
功能描述:MOSFET -90.0 Amps -200V 0.044 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTL10P20
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254
IXTL10P50
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 10A I(D) | TO-254
IXTL11P40
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 11A I(D) | TO-254
IXTL13N65
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 13A I(D) | TO-254
IXTL14N60
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 14A I(D) | TO-254